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Published: 29 June 2017


This report presents a Digital Functional Analysis of the Qualcomm HG11-P5219-1 die found inside the Qualcomm MSM8998 Snapdragon 835 PoP component. This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels including, fin/STI, gate, contacts, and minimum pitch metals
  • Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
  • Plan-view optical micrograph of the die delayered to the gate level
  • Identification of major functional blocks on a gate level die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and gate level die photographs delivered in the ICWorks Browser
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

Report Description

This report presents a Digital Functional Analysis of the Qualcomm HG11-P5219-1 die found inside the Qualcomm MSM8998 Snapdragon 835 PoP component.

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