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Monitoring and analyzing semiconductor and microelectronics innovation from the system to the atomic level (sub 5 nm)
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Proving patent value in advanced technology markets, matching patent claims to the evidence of their use in consumer products
Latest Posts From Our Blogs
Fitbit Luxe Teardown
Will the Fitbit Charge 5 Outshine the Fitbit Luxe? Stacy Wegner September 9, 2021 We don’t know, and we do not comment on whether one device is better than its previous generation. What we do, is look at and compare generations of devices. And while we wait for our pre-order of our Fitbit Charge 5
Disruptive Technology: TSMC 22ULL eMRAM
TSMC 22ULL eMRAM Die removed from Ambiq™ Apollo4 Another Disruptive Technology on Embedded Memory! Another disruptive product on embedded Memory (eMemory) has been arrived and quickly reviewed! TSMC has successfully developed and commercialized 22 nm eMRAM products with STT-MRAM technology and
Micron 176L 3D NAND
NAND Memory Technology Micron B47R 3D CTF CuA NAND Die, the World’s First 176L (195T)! Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron 176L 3D NAND
Latest SJ-MOSFET Technology, Can It Still Compete with Wide Bandgap?
Power Semiconductor Technology Latest SJ-MOSFET Technology, Can It Still Compete with Wide Bandgap? Now both silicon carbide (SiC) and gallium nitride (GaN) products are having an impact in the marketplace, it is easy to think that there is no longer a place for silicon (Si) in power electronics
Micron DDR5 DIMM Technology
DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as well. One of DDR5 DIMM products has been confirmed
Micron 1α DRAM Technology
DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first sub-15nm cell integrated DRAM product. Micron Z41C
