Interested in this report?

Published: 14 February 2018


The complete Advanced Memory Essentials (AME) Part 2 deliverable includes a concise analyst’s summary of critical device metrics, with focus on salient word line and bit line connectivity features and supported by the following analyses and image folders:

  • Large area scanning electron microscopy (SEM) image mosaic of word line and bit line areas, showing all metal levels required to extract connectivity of the array to the word line and bit line decoder regions
  • SEM image mosaics viewable in the CircuitVision software
  • Low voltage (LV) and high voltage (HV) periphery transistor transmission electron microscopy (TEM) detail images
  • Extended materials analysis, including energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) line scan data
  • Tabular summary of key dimensions

Report Description

This product presents Part 2 of an Advanced Memory Essentials of the SanDisk/Toshiba 64-Layer 256Gb 3D NAND flash.

Recent OMR Reports

EXR-1810-801  |   Published: 3 October 2025
EXR-1810-801 - NXP NFC Controller 100VB27 - Apple iPhone Xs Exploratory Report
EXR-1901-802  |   Published: 12 February 2019
This report presents an Exploratory Analysis of the SK Hynix DRAM 2nd generation high-bandwidth memory (HBM2) package from the AMD 215-0894144 Vega 10 XT graphics processor package.
DEF-1901-801  |   Published: 11 February 2019
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...