February 17, 2021 NAND & DRAM Memory Technology Download the brief Samsung 12Gb D1z LPDDR5 with EUV Lithography Applied After months of waiting, we have seen Samsung Electronics’ applied Extreme Ultraviolet (EUV) lithography technology for D1z DRAM in mass production. This is an instrumental change

February 02, 2021 Teardown Disruptive Technology Samsung Galaxy S21 – rival 5 nm solutions, new design wins, and LPDDR5 with 1z EUV? Right from the release announcement, it seemed the Samsung Galaxy S21 flagship phone was going to be a little bit different. First, the phone was due to be announced

February 02, 2021 Ziad Shukri A Recap of Samsung’s 108MP Image Sensors In 2019, Samsung introduced the first 108MP image sensor for mobile applications – the S5KHMX with ISOCELL Plus® technology. We first confirmed its use in the rear (wide) cam of the Xiaomi Mi CC9 Pro in November 2019. The S5KHMX

February 02, 2021 Sinjin Dixon-Warren TechInsights Cracks Open the STMicroelectronics MasterGaN2 TechInsights recently completed a full analysis of the STMicroelectronics MasterGaN1. We found that the device contained two identical GaN Systems dies, with 1017-W3V2P4 die markings, wired in a half

February 01, 2021 Dick James Intel Shows Early Ponte Vecchio Part Occasionally we will see something in the media that we think worth commenting on, and post as an “In Case You Missed It” (ICYMI) blog. In this case it was a Twitter post by Intel’s Raja Koduri (@rajaonthe edge) showing a complex

January 12, 2021 John Sullivan HiSilicon’s move towards an antenna to modem solution HiSilicon provides the RF transceiver and mobile SoC for Huawei’s mobile handsets but the RF front end has traditionally been sourced from the usual front end suppliers such as Skyworks, Qorvo and Murata among

December 28, 2020 Dick James Intel Launches 2nd-Gen 3D XPoint Memory, Discusses at IEDM On Dec 16th Intel held a " Memory & Storage Moment"" where they announced five new memory and storage products; two Optane™ SSDs, one for data centers, and one aimed at PCs, and three 144-layer 3D-NAND SSDs

December 21, 2020 Stephen Russell Toshiba Integrated Diode into SiC MOSFET Every silicon carbide (SiC) manufacturer seemingly has their own approach to FET fabrication. Be it planar, trench, JFET, etc. there is no dominant design throughout the market. Toshiba’s recently released 2nd generation 1200

Dick James, Fellow Emeritus Dick James is an almost 50-year veteran of the semiconductor industry, working in the process development, design, manufacturing, packaging and reverse engineering of semiconductor devices. Dick is a regular contributor to TechStream blog content for subscribers. December

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