Product Item Code
SiC Power FET
Power Semiconductor - Silicon Carbide (SiC) Floorplan
UnitedSiC 750 V 18 mΩ Gen 4 SiC FET Power Floorplan Analysis
This report presents a Power Floorplan Analysis of the UnitedSiC UJ4C075018K4S, a power FET. The device features a maximum continuous source/drain (S/D) current of 120 A and 18 mΩS/D ON-resistance and is designed for electric vehicle (EV) charging, photovoltaic (PV) inverters, switch mode power supplies, motor drives, and induction heating.
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