Product Item Code
GaN Power IC
Power Semiconductor - Power Essentials
This report presents a power floorplan analysis of the STMicroelectronics MASTERGAN1 device. The MASTERGAN1 features a 600 V, 150 mΩon-resistance half-bridge circuit with gallium nitride high electron mobility transistors with a 650 V drain-source breakdown voltage (V(BR)DS), and a silicon-based bipolar-CMOS-DMOS gate driver . The focus of this report is on the GaN HEMT dies.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).