Product Item Code
GaN Power IC
Power Semiconductor - Power Essentials
STMicroelectronics MASTERGAN1 600 V Half-Bridge Driver with Two e-Mode GaN HEMT Power Essentials Summary
This report presents a power floorplan analysis of the STMicroelectronics MASTERGAN1 device. The MASTERGAN1 features a 600 V, 150 mΩon-resistance half-bridge circuit with gallium nitride high electron mobility transistors with a 650 V drain-source breakdown voltage (V(BR)DS), and a silicon-based bipolar-CMOS-DMOS gate driver . The focus of this report is on the GaN HEMT dies.
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