Product Item Code
SiC Power FET
Power Semiconductor - Silicon Carbide (SiC) Floorplan
This report presents a Power Floorplan Analysis of the UnitedSiC UJ4C075018K4S, a power FET. The device features a maximum continuous source/drain (S/D) current of 120 A and 18 mΩS/D ON-resistance and is designed for electric vehicle (EV) charging, photovoltaic (PV) inverters, switch mode power supplies, motor drives, and induction heating.