This report presents a Power Floorplan Analysis of the Efficient Power Conversion EPC2218 enhancement-mode power transistor device. The EPC2218 is a 100 V, 3.2 mΩon-resistance gallium nitride (GaN) power integrated circuit (IC). The EPC2218 has nearly 20% lower RDS(on) compared to previous devices. It is designed for applications including DC-DC converters, brushless DC (BLDC) motor drives, synchronous rectification, and point of load converters.