Toshiba TW070J120B 1200 V Silicon Carbide (SiC) Power Essentials

Product Code
PEF-2012-801
Release Date
26/02/2021
Availability
Published
Product Item Code
TOS-TW070J120B
Device Manufacturer
Toshiba
Device Type
Power MOSFET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-2012-801
This report presents a Power Essentials (PEF) analysis of Toshiba TW070J120B silicon carbide (SiC) based power FET. The TW070J120B is a 1200 V N-channel enhancement mode MOSFET with an integrated Schottky barrier diode (SBD). The complete PEF deliverable includes a one-page summary of observed device metrics and salient features, supported by the following unannotated image folders:
  • Package optical photographs, package X-ray images, die photographs, optical photographs of die features
  • Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
  • Exploratory cross-sectional plan-view SEM images of the device structure
  • Detailed cross-sectional scanning microwave impedance microscopy (sMIM) analysis of the dopant structures
  • The image set for a standard PEF project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis, and a single sMIM sample for the detailed structural analysis. Value add information such as additional planes of cross-sectioning, may be included on a case-by-case basis

The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.
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Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).

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