ToshibaTW070J120B 1200 V SiCN-Channel MOSFET Power Floorplan Analysis

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Product Code
PFR-2011-803
Release Date
08/01/2021
Availability
Published
Product Item Code
TOS-TW070J120B
Device Manufacturer
Toshiba
Device Type
Power MOSFET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Floorplan
Report Code
PFR-2011-803
This report presents an analysis of the Toshiba TW070J12B power silicon carbide-based MOSFET. The TW070J12B is a 1200 V, N-channel enhancement mode MOSFET developed using Toshiba’s advanced second generation MOSFET technology, featuring a built-in SiC Schottky barrier diode.
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