Toshiba TW070J120B 1200 V SiC N-Channel MOSFET Power Floorplan Analysis

Product Code

PFR-2011-803

Release Date

08/01/2021

Availability

Published

Product Item Code

TOS-TW070J120B

Device Manufacturer

Toshiba

Device Type

Power MOSFET

Subscription

Power Semiconductor

Channel

Power Semiconductor - Silicon Carbide (SiC) Floorplan

Toshiba TW070J120B 1200 V SiC N-Channel MOSFET Power Floorplan Analysis

This report presents an analysis of the Toshiba TW070J12B power silicon carbide-based MOSFET. The TW070J12B is a 1200 V, N-channel enhancement mode MOSFET developed using Toshiba’s advanced second generation MOSFET technology, featuring a built-in SiC Schottky barrier diode.

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