Infineon IGT60R190D1S 600 V CoolGaN Power Floorplan Analysis

Product Code
PFR-2011-802
Release Date
05/02/2021
Availability
Published
Product Item Code
INF-IGT60R190D1SATMA1
Device Manufacturer
Infineon
Device Type
GaN Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Gallium Nitride (GaN) Floorplan
Report Code
PFR-2011-802
This report presents a Power Floorplan Analysis of the Infineon IGT60R190D1S CoolGaN device. The IGT60R190D1S is a 600 V, 190 mΩ on-resistance gallium nitride (GaN) enhancement mode power transistor (normally-off) utilizing high electron mobility transistor (e-HEMT) technology.
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