Product Code
PFR-2011-802
Release Date
Availability
Published
Product Item Code
INF-IGT60R190D1SATMA1
Device Manufacturer
Infineon
Device Type
GaN Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Gallium Nitride (GaN) Floorplan
Infineon IGT60R190D1S 600 V CoolGaN Power Floorplan Analysis
This report presents a Power Floorplan Analysis of the Infineon IGT60R190D1S CoolGaN device. The IGT60R190D1S is a 600 V, 190 mΩ on-resistance gallium nitride (GaN) enhancement mode power transistor (normally-off) utilizing high electron mobility transistor (e-HEMT) technology.
 

Make informed business decisions faster and with greater confidence

Start My Free Trial

 

The authoritative information platform to the semiconductor industry.

Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.