GaN Systems GS-065-011-1-L650 V Enhancement Mode GaN Transistor Power Floorplan Analysis

Product Code
PFR-2011-801
Release Date
29/01/2021
Availability
Published
Product Item Code
GAN-GS-065-011-1-L
Device Manufacturer
GAN Systems
Device Type
GaN Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Gallium Nitride (GaN) Floorplan
Report Code
PFR-2011-801
This report presents a Power Floorplan Analysis of the GaN Systems GS-065-011-1-L device. The GS-065-011-1-L features a 650 V, 150 m Ω GaN high electron mobility transistor with a 650 V maximum drain-source breakdown voltage rating.
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