Product Item Code
GaN Power IC
Power Semiconductor - Gallium Nitride (GaN) Floorplan
This report presents a Power Floorplan analysis of the STMicroelectronics MASTERGAN1 device. The MASTERGAN1 features a 600 V, 150 m ΩON-resistance half-bridge circuit with gallium nitride (GaN) high electron mobility transistors (HEMTs), a 650 V drain-source breakdown voltage (V(BR)DS), and a silicon-based bipolar-CMOS-DMOS (BCD) gate driver . The focus of this report is on the GaN HEMT dies.