ON Semi NVHL080N120SC1 1200V SiC Power Floorplan Analysis

Product Code
PFR-2010-802
Release Date
24/11/2020
Availability
Published
Product Item Code
ONS-NVHL080N120SC1
Device Manufacturer
On Semi
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Floorplan
Report Code
PFR-2010-802
This report presents an analysis of the ON Semiconductor NVHL080N120SC1 power silicon carbide (SiC) based MOSFET. The NVHL080N120SC1 is a 1200 V, N-channel enhancement mode MOSFET. The device features maximum continuous S/D current of 31 A and 80 mΩ S/D ON-resistance at 25 C° and up to 132 A pulsed. The NVHL080N120SC1 is designed mainly for automotive on board chargers and automotive DC/DC converters for electric and hybrid vehicles.
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