Availability
Published
Product Code
PFR-2010-802
Product Item Code
ONS-NVHL080N120SC1
Device Manufacturer
On Semi
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Floorplan
ON Semi NVHL080N120SC1 1200V SiC Power Floorplan Analysis
This report presents an analysis of the ON Semiconductor NVHL080N120SC1 power silicon carbide (SiC) based MOSFET. The NVHL080N120SC1 is a 1200 V, N-channel enhancement mode MOSFET. The device features maximum continuous S/D current of 31 A and 80 mΩ S/D ON-resistance at 25 C° and up to 132 A pulsed. The NVHL080N120SC1 is designed mainly for automotive on board chargers and automotive DC/DC converters for electric and hybrid vehicles.
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