Product Item Code
SiC Power FET
Power Semiconductor - Silicon Carbide (SiC) Floorplan
This report presents an analysis of the ON Semiconductor NVHL080N120SC1 power silicon carbide (SiC) based MOSFET. The NVHL080N120SC1 is a 1200 V, N-channel enhancement mode MOSFET. The device features maximum continuous S/D current of 31 A and 80 mΩ S/D ON-resistance at 25 C° and up to 132 A pulsed. The NVHL080N120SC1 is designed mainly for automotive on board chargers and automotive DC/DC converters for electric and hybrid vehicles.