Product Item Code
Power Semiconductor - Power Essentials
This report presents an analysis of the Infineon IMBF170R450M1XTMA1 SiC-based power FET. The IMBF170R450M1XTMA1 is a 1700 V CoolSiC™ N-channel enhancement mode MOSFET. The device features maximum continuous source/drain current of 9.8 A and 450 mΩ source/drain on-resistance and is designed for uninterrupted power supply (UPS), solar PV inverter, solar energy harvesting, and EV charging infrastructure applications.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).