Product Item Code
Power Semiconductor - Power Essentials
This report presents an analysis of the Infineon IMBF170R450M1XTMA1 SiC-based power FET. The IMBF170R450M1XTMA1 is a 1700 V CoolSiC™ N-channel enhancement mode MOSFET.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).