The Advanced Memory Essentials (AME) deliverable for NAND Flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
- Downstream product teardown
- Package photographs and X-rays, top metal and polysilicon level die photographs
- SEM bevel
- Memory array bevel
- Periphery at the polysilicon level
- Memory and periphery at metal layers
- SEM cross section along the word line (WL) and bit line (BL) of the general device structure, metals, dielectrics, and memory stacks
- TEM image folders
- TEM bevel in the memory array
- TEM cross section along bit line
- TEM cross section along word line
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.