SK Hynix H9HKNNNCRMMUYR-NEH LPDDR4X SDRAM Memory Floorplan Analysis

Product Code
Release Date
Product Item Code
Device Manufacturer
Device Type
Memory - NAND & DRAM
Memory - DRAM Floorplan Analysis
Report Code
This report presents a Memory Floorplan Analysis of the SK Hynix SK8GLPD4E die found inside the SK Hynix H9HKNNNCRMMUYR-NEH LPDDR4X DRAM device. The H9HKNNNCRMMUYR-NEH device was extracted from an Apple iPhone XS Max smartphone with model number A1921.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • SEM plan-view micrographs at active, word line (WL) and bit line (BL) levels from beveled sample
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High resolution top metal and polysilicon die photographs delivered in the CircuitVision software
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process
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