
Product Code
MFR-1811-803
Availability
Published
Product Item Code
HYN-SK8GLPD4E
Device Manufacturer
Hynix
Device Type
LPDDR4X
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM Floorplan Analysis
Report Code
MFR-1811-803
This report presents a Memory Floorplan Analysis of the SK Hynix SK8GLPD4E die found inside the SK Hynix H9HKNNNCRMMUYR-NEH LPDDR4X DRAM device. The H9HKNNNCRMMUYR-NEH device was extracted from an Apple iPhone XS Max smartphone with model number A1921.
This report contains the following detailed information:
This report contains the following detailed information:
- Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
- SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
- SEM plan-view micrographs at active, word line (WL) and bit line (BL) levels from beveled sample
- Measurements of vertical and horizontal dimensions of major microstructural features
- Plan-view optical micrograph of the die delayered to the polysilicon layer
- Identification of major functional blocks on a polysilicon die photograph
- Table of functional block sizes and percentage die utilization
- High resolution top metal and polysilicon die photographs delivered in the CircuitVision software
- Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process
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