This report presents a Memory Floorplan Analysis of the Toshiba FSTO_256G die found inside the Toshiba TH58LJT0T24BADE 3D NAND flash memory package.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features in the BL and WL directions
• SEM plan-view micrographs at the middle of the vertical channel level and the BL levels from beveled sample
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon
• Identification of major functional blocks on a diffusion layer die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software