Samsung K9XVGY8J5M-CCK0 V4 QLC V-NAND Flash Memory Floorplan Analysis

Product Code
MFR-1812-801
Release Date
30/01/2019
Availability
Published
Product Item Code
SAM-K9XVGY8J5M-CCK0
Device Manufacturer
Samsung
Device Type
NAND Flash
Subscription
Memory - NAND & DRAM
Channel
Memory - NAND Floorplan Analysis
Report Code
MFR-1812-801
This report presents a Memory Floorplan Analysis of the Samsung K93KGD8U0M die found inside the Samsung K9XVGY8J5M-CCK0 package. The K9XVGY8J5M-CCK0 was extracted from a Samsung 1 TB SSD 860 QVO with the model number MZ-76Q1T0.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM bevel micrographs through the memory array at the mid-height to show the general layout and at the interconnect level routing the BL to measure the BL pitch
  • SEM cross-sectional micrographs across the BL to show the die general view, including the full height of the memory array, as well as high-magnification SEM images at the top of the array to measure the BL pitch
  • SEM cross-sectional micrographs across the WL to show the full height of the memory array
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on the polysilicon layer die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon level die photographs delivered in the CircuitVision software
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