Product Code
PEF-2009-801
Availability
Published
Product Item Code
IS1-INN650D02
Device Manufacturer
Innoscience
Device Type
GaN Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-2009-801
Image
This report presents a Power Essentials analysis of the Innoscience INN650D02, a 650 V, 200 mΩ, normally on, gallium nitride (GaN) power FET. The device uses a high-voltage power GaN high electron mobility transistor (HEMT). The INN650D02 was found by TechInsights in the DongGuan RuiHeng Electronic RH-PD65W 65 W GaN charger.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).