Product Item Code
GaN Power FET
Power Semiconductor - Power Essentials
Innoscience INN650D02 650 V Enhancement-Mode GaN Power FET Power Essentials Summary
This report presents a Power Essentials analysis of the Innoscience INN650D02, a 650 V, 200 mΩ, normally on, gallium nitride (GaN) power FET. The device uses a high-voltage power GaN high electron mobility transistor (HEMT). The INN650D02 was found by TechInsights in the DongGuan RuiHeng Electronic RH-PD65W 65 W GaN charger.
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