STMicroelectronics SCTH90N65G2V-7 650 V Silicon Carbide Power MOSFET Power Essentials Summary

Product Code

PEF-2005-801

Release Date

26/06/2020

Availability

Published

Product Item Code

STM-SCTH90N65G2V-7

Device Manufacturer

STMicroelectronics

Device Type

SiC Power FET

Subscription

Power Semiconductor

Channel

Power Semiconductor - Power Essentials

STMicroelectronics SCTH90N65G2V-7 650 V Silicon Carbide Power MOSFET Power Essentials Summary

This report presents an analysis of the STMicroelectronics SCTH90N65G2V-7 power silicon carbide (SiC) based MOSFET. The SCTH90N65G2V-7 is a 650 V, 116 A, N-channel enhancement mode MOSFET developed using STMicroelectronics’ advanced and innovative second generation MOSFET technology, featuring remarkably low ON-resistance per unit area and very good switching performance.

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