Qualcomm PMI632 PMIC TSMC 0.13 µm BCD Process Review

Product Code

PPR-1901-801

Release Date

03/04/2019

Availability

Published

Product Item Code

QUA-PMI632

Device Manufacturer

Qualcomm

Device Type

Power Management IC

Subscription

Power Semiconductor

Channel

Power Semiconductor - Power Essentials

Qualcomm PMI632 PMIC TSMC 0.13 µm BCD Process Review

This report presents a Process Review of the TSMC 0.13 µm bipolar-CMOS-DMOS (BCD) process found in the Qualcomm PMI632 power management integrated circuit (PMIC) device. The PMI632 is packaged using wafer-level chip-scale packaging (WLCSP).

View Table of Contents

Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Infineon IM828-XCC 1200 V CoolSiC IPM Power Floorplan Analysis	Infineon	Packaging	Power Semiconductor - Silicon Carbide (SiC) Floorplan
UnitedSiC UJ4C075018K4S 750 V, 18 mΩ Gen. 4 SiC FET Power Essentials	UnitedSiC	Process	Power Semiconductor - Power Essentials
UnitedSiC 750 V 18 mΩ Gen 4 SiC FET Power Floorplan Analysis	UnitedSiC	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Wolfspeed/Cree C3M0015065D Gen3 650V SiC Power Essentials	Cree	Process	Power Semiconductor - Power Essentials
ExaGaN EXA06C065LDS0 650V GaN Power Floorplan Analysis	ExaGaN	Process	Power Semiconductor - Gallium Nitride (GaN) Floorplan
GeneSiC G2R120MT33J 3300V 120 mΩ SiC MOSFET Power Floorplan Analysis	GeneSiC	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Efficient Power Conversion EPC2218 100 V GaN Power Floorplan Analysis	EFFICIENT POWER CONVERSION	Floorplan	Power Semiconductor - Gallium Nitride (GaN) Floorplan
STMicroelectronics MASTERGAN1 Power Package Analysis	STMicroelectronics	Packaging	Power Semiconductor - Package Analysis
Microsemi MSC025SMA120B 1200V SiC Power Floorplan Analysis	Microsemi	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Toshiba TW070J120B 1200 V Silicon Carbide (SiC) Power Essentials	Toshiba	Process	Power Semiconductor - Power Essentials