Product Item Code
SiC Power FET
Power Semiconductor - Power Essentials
This report presents an analysis of the UnitedSiC UF3SC120009K4S power FET. The device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET die is co-packaged with a Si MOSFET die to produce a normally-off SiC FET device.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).