Product Item Code
SiC Power FET
Power Semiconductor - Power Essentials
This report presents an analysis of the STMicroelectronics SCTH90N65G2V-7 power silicon carbide (SiC) based MOSFET. The SCTH90N65G2V-7 is a 650 V, 116 A, N-channel enhancement mode MOSFET developed using STMicroelectronics’ advanced and innovative second generation MOSFET technology, featuring remarkably low ON-resistance per unit area and very good switching performance.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).