STMicroelectronics SCTH90N65G2V-7 650 V Silicon Carbide Power MOSFET Power Essentials Summary

Product Code
PEF-2005-801
Release Date
26/06/2020
Availability
Published
Product Item Code
STM-SCTH90N65G2V-7
Device Manufacturer
STMicroelectronics
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-2005-801
This report presents an analysis of the STMicroelectronics SCTH90N65G2V-7 power silicon carbide (SiC) based MOSFET. The SCTH90N65G2V-7 is a 650 V, 116 A, N-channel enhancement mode MOSFET developed using STMicroelectronics’ advanced and innovative second generation MOSFET technology, featuring remarkably low ON-resistance per unit area and very good switching performance.
Power Semiconductor Subscription

Get regular, succinct analysis of emerging power process semiconductor products

Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).

Don't miss another update from TechInsights.

All our latest content updates sent to you a few times a month.