This report presents a Memory Floorplan Analysis of the Samsung K3UH7H70AM-AGCL LPDDR4X die found inside the Samsung K3UH7H70AM-AGCL PoP.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of a bevel through the memory array showing the active, bit line and word line level plan-view features of the memory array and a cross section through the BL, showing the general structure of the DRAM cell array, dielectric materials, major features, and transistors
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software