SK hynix 72L 3D NAND Analysis

Posted: May 31, 2018

SK hynix claims to have created the industry’s first-ever 72-layer 256Gb 3D NAND flash. This innovation has a block size 50% larger compared to 48-layer 3D TLC chips, it has a lower programming time (tPROG), the memory bit density, with 3.55 Gb/mm², increased 30% from 48L TLC, and it has a double-stack process integration for NAND string.

TechInsights has analyzed this part, and we are preparing to release a number of reports within the next 2 months.

We have prepared a brief that provides additional information about this product and our analysis.

Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Hynix H27EGLM 48-Layer 3D V3-NAND Flash Advanced Memory Essentials	Hynix	Process	Memory - Process
Intel 29F01T2ANCTH2 64-Layer 3D NAND Flash Advanced Memory Essentials – Part 2	Intel	Process	Memory - Process
Intel 29F01T2ANCTH2 (B16A Die) 64-Layer 3D NAND Flash Memory Logic Transistor Characterization	Intel	Functional - Testing
Intel 29F01T2ANCTH2 64-Layer 256 Gb 3D NAND Flash Advanced Memory Essentials Package (Part 1)	Intel	Process	Memory - Process
Samsung K9CKGY8H5A 64-Layer 3D NAND Flash Advanced Memory Essentials Part 2	Samsung	Process	Memory - Process
Samsung K9CKGY8H5A 64-Layer 3D NAND Flash Advanced Memory Essentials Part 1	Samsung	Process	Memory - Process
Samsung KLUCG4J1CB-B0B1 14 nm NAND Flash Advanced Memory Essentials	Samsung	Process	Memory - Process
SanDisk/Toshiba 64-Layer 256Gb 3D NAND Flash Advanced Memory Essentials Part 1	SanDisk	Process	Memory - Process
Sandisk/Toshiba 05138_064G 64-layer 3D NAND Flash Circuit Analysis	SanDisk	Circuit	Memory - NAND Circuit Analysis
Internal Waveform Analysis on the Sandisk/Toshiba SDSQUNI 256 Gbit 3D NAND Flash Memory	SanDisk	Functional - Testing