Product Item Code
Logic - Transistor Characterization
Logic - Transistor Characterization (IP)
Qualcomm SM8350 Snapdragon 888 Samsung 5 nm FinFET Process Transistor Characterization
This report presents key DC electrical characteristics for logic NMOS and PMOS transistors located in the core region of the SM8350 (HG11-PP133-200) die found inside the Qualcomm Snapdragon 888 application processor. The Qualcomm Snapdragon 888 application processor was extracted from the Xiaomi Mi 11 smartphone. The Qualcomm Snapdragon 888 SoC is manufactured in Samsung's 5LPP process. This is a minor evolution of their 7LPP technology.
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