Product Item Code
Logic - Transistor Characterization (IP)
Logic - Transistor Characterization
Samsung 10LPP Samsung Exynos 9810 Transistor Characterization Report
This report presents key DC electrical characteristics for logic NMOS and PMOS transistors located in the core region of the Samsung S5E9810A02 die, found inside a Samsung Exynos 9810 PoP component. The Exynos 9810 device was extracted from a Samsung Galaxy S9+ smartphone, model number SM-G965N. The S5E9810A02 die is fabricated using Samsung’s 10 nm LPP, HKMG finFET CMOS process.
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