This report presents a Digital Functional Analysis of the S4LR026A01 die, found inside the Tesla Full Self-Driving (FSD) UBQ01B0 system-on-chip (SoC) application processor package. It features the use of 14 nm finFET for the first time in a production vehicle. This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels including fin/shallow trench isolation (STI), gate, contacts, and minimum pitch metals
• Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
• Plan-view optical micrograph of the die delayered to the metal gate level
• Identification of major functional blocks on a gate level die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and gate level die photographs delivered in the CircuitVision software
• Cost of die based on the process analysis