Micron MT40A4G4JC-062:E 1z nm 16 Gb DDR4 Transistor Characterization

Product Code
TCR-2007-801
Release Date
02/11/2020
Availability
Published
Product Item Code
MIC-MT40A4G4JC-062E_E
Device Manufacturer
Micron Technology
Device Type
DDR4 SDRAM
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM SWD and SA Transistor Characterization
Report Code
TCR-2007-801
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and wordline driver regions of the Micron Technology Z32D die found inside a Micron Technology MT40A4G4JC-062E:E DDR4 SDRAM BGA package. This is the first commercialized 1z nm DRAM technology node from the industry, with the highest bit density (0.247 Gb/mm2, a 25% increase from Micron 1y nm 16 Gb DDR4 die) and the smallest cell size (0.0020 µm2, scaled down 17% from Micron 1y nm) to date.
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