Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
CXMT CXDQ3A8AM-CG 2x nm (22nm) 8 Gb DDR4 Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the ChangXin Memory Technology (CXMT) CXDQ3A8AM-CG DDR4 SDRAM die.
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