Product Item Code
Memory - NAND & DRAM
Memory - NAND Circuit Analysis
CircuitVision Analysis on the Samsung K9DUGY8J5B-DCK0 (K9AFGD8J0B Die) 92-Layer 3D V-NAND Flash IO Buffer
The following is a Circuit Vision Analysis report on the Samsung K9DUGY8J5B-DCK0 (with a die marking of K9AFGD8J0B) 92-layer NAND flash I/O buffer area. The report contains a full set of schematics and annotated photographs divided into the following sections:
- Architectural Overview
- I/O Buffer
- Standard Cells
- Appendix A - Signal List
The authoritative information platform to the semiconductor industry.
Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.