Availability
Published
Product Code
MFR-1807-803
Release Date
Product Item Code
HYN-H28S7Q302BMR-UFS
Device Manufacturer
Hynix
Device Type
NAND Flash
Subscription
Memory - NAND & DRAM
Channel
Memory - NAND Floorplan Analysis
SK Hynix H28S7Q302BMR-UFS 48L 3D-V3 NAND Flash (UFS2.1) Memory Functional Analysis
This report presents a Memory Functional Analysis of the SK Hynix H27DGLG die found inside the SK Hynix H28S7Q302BMR-UFS package. The H28S7Q302BMR-UFS was extracted from the Xiaomi Tech Mi 8 smartphone with the model number M1803E1A.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of a bevel through the memory array showing the active, BL and WL level plan-view features of the memory array and a cross section through the BL, showing the general structure of the flash cell array, die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to diffusion layer
  • Identification of major functional blocks on a diffusion layer die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software
 

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