Samsung’s Anti-Fuse Technology found on 18 nm DRAM
Posted: April 11, 2018 Contributing Author: Jeongdong Choe, Senior Technical Fellow We at TechInsights are happy to report that we have found and analyzed Anti-fuse array blocks on a Samsung 18 nm DDR4 DRAM die. Anti-fuse is one of the embedded NVM technologies, which include: embedded Flash ROM