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GaN USB-C Charger Market Heating Up in 2021

GaN USB-C Charger Market Heating Up in 2021

March 10, 2021 Sinjin Dixon-Warren Power Technology GaN USB-C Charger Market Heating Up in 2021 Gallium nitride (GaN) based high power USB chargers for smartphones, tablets and laptops is a growing area in the power electronics market. TechInsights
March 10, 2021 Mar 10
Prospects for Commercial High Voltage Silicon Carbide Devices

Prospects for Commercial High Voltage Silicon Carbide Devices - a Summary

March 03, 2021 Dr Peter Gammon Power Technology Prospects for Commercial High Voltage Silicon Carbide Devices - a Summary SiC power devices have the potential to reach voltage ratings beyond 30 kV, yet today, SiC chip manufacturers are focussed on
March 03, 2021 Mar 3
LiDAR 101

LiDAR 101 – Solid-State and Mechanical LiDARs

February 19, 2021 Automotive Technology LiDAR 101 – Solid-State and Mechanical LiDARs 2020 has been an exciting year for LiDAR manufacturers. Five LiDAR companies (Velodyne Inc, Luminar Technologies Inc, Innoviz Technologies Ltd, Aeva Inc, and Ouster
February 19, 2021 Feb 19
Samsung 12Gb D1z LPDDR5 with EUV Lithography Applied

Samsung 12Gb D1z LPDDR5 with EUV Lithography Applied

February 17, 2021 NAND & DRAM Memory Technology Download the brief Samsung 12Gb D1z LPDDR5 with EUV Lithography Applied After months of waiting, we have seen Samsung Electronics’ applied Extreme Ultraviolet (EUV) lithography technology for D1z DRAM
February 17, 2021 Feb 17
Samsung 12Gb D1z LPDDR5 with EUV Lithography Applied

三星EUV微影製程D1z記憶體揭密

March 15, 2021 Jeongdong Choe,TechInsights 三星EUV微影製程D1z記憶體揭密 經過幾個⽉的漫⻑等待之後,三星電⼦(Samsung Electronics)採⽤極紫外光(EUV)微影製 程的D1z DRAM終於量產了! 三星電⼦在今年稍早發表了號稱業界⾸創,同時分別採⽤氟化氬浸潤式微影(ArF-i)製程與 EUV微影技術的D1z DRAM,⽽TechInsights很興奮地宣佈,我們針對三星最新/最先進 D1z DRAM的拆解分析有⼀些「新發現」
February 17, 2021 Feb 17
Samsung Galaxy S21

Samsung Galaxy S21 – rival 5 nm solutions, new design wins, and LPDDR5 with 1z EUV?

February 02, 2021 Teardown Disruptive Technology Samsung Galaxy S21 – rival 5 nm solutions, new design wins, and LPDDR5 with 1z EUV? Right from the release announcement, it seemed the Samsung Galaxy S21 flagship phone was going to be a little bit
February 02, 2021 Feb 2
A Recap of Samsung’s 108MP Image Sensors

A Recap of Samsung’s 108MP Image Sensors - Image Sensor TechStream Blog

February 02, 2021 Ziad Shukri A Recap of Samsung’s 108MP Image Sensors In 2019, Samsung introduced the first 108MP image sensor for mobile applications – the S5KHMX with ISOCELL Plus® technology. We first confirmed its use in the rear (wide) cam of
February 02, 2021 Feb 2
TechStream

TechInsights Cracks Open the STMicroelectronics MasterGaN2 - Power TechStream Blog

February 02, 2021 Sinjin Dixon-Warren TechInsights Cracks Open the STMicroelectronics MasterGaN2 TechInsights recently completed a full analysis of the STMicroelectronics MasterGaN1. We found that the device contained two identical GaN Systems dies
February 02, 2021 Feb 2
TechStream

Intel Shows Early Ponte Vecchio Part - Logic TechStream Blog

February 01, 2021 Dick James Intel Shows Early Ponte Vecchio Part Occasionally we will see something in the media that we think worth commenting on, and post as an “In Case You Missed It” (ICYMI) blog. In this case it was a Twitter post by Intel’s
February 01, 2021 Feb 1
techstream

HiSilicon’s move towards an antenna to modem solution - Mobile RF TechStream Blog

January 12, 2021 John Sullivan HiSilicon’s move towards an antenna to modem solution HiSilicon provides the RF transceiver and mobile SoC for Huawei’s mobile handsets but the RF front end has traditionally been sourced from the usual front end
January 12, 2021 Jan 12
memory

Intel Launches 2nd-Gen 3D XPoint Memory, Discusses at IEDM - Memory TechStream Blog

December 28, 2020 Dick James Intel Launches 2nd-Gen 3D XPoint Memory, Discusses at IEDM On Dec 16th Intel held a " Memory & Storage Moment"" where they announced five new memory and storage products; two Optane™ SSDs, one for data centers, and one
December 28, 2020 Dec 28
power

Toshiba Integrated Diode into SiC MOSFET - Power TechStream Blog

December 21, 2020 Stephen Russell Toshiba Integrated Diode into SiC MOSFET Every silicon carbide (SiC) manufacturer seemingly has their own approach to FET fabrication. Be it planar, trench, JFET, etc. there is no dominant design throughout the
December 21, 2020 Dec 21
Apple M1

Analysis of Apple M1 is Happening – and, Thermal Imaging?

Dick James, Fellow Emeritus Dick James is an almost 50-year veteran of the semiconductor industry, working in the process development, design, manufacturing, packaging and reverse engineering of semiconductor devices. Dick is a regular contributor to
December 21, 2020 Dec 21
A14

Two new Apple SoCs, two market events: Apple A14 and M1

Available Logic Subscriptions > Process & Advanced Packaging > Process Flows > Transistor Characterization > SoC Design Analysis > Digital Floorplan Analysis > Analytics - Digital Floorplan > Standard Cell GDS Library Analysis > Transistor
December 16, 2020 Dec 16
Wireless Charging Speeds Up - Teardown TechStream Blog

Wireless Charging Speeds Up - Teardown TechStream Blog

Stacy Wegner, Senior Technology Analyst Stacy Wegner is the Senior Technology Analyst of TechInsights’ Teardown division, responsible for ensuring the highly technical data produced by our analysts is transformed into consumable competitive
December 08, 2020 Dec 8
Inside the STMicroelectronics MasterGaN1 Integrated GAN High Voltage Half-Bridge

Inside the STMicroelectronics MasterGaN1 Integrated GAN High Voltage Half-Bridge -TechStream Power Semiconductor Blog

Sinjin Dixon-Warren, Senior Process Analyst Sinjin Dixon-Warren is a Senior Process Analyst at TechInsights with over 20 years of experience with semiconductor analysis and is a Subject Matter Expert (SME) for Power Electronics Analysis. He holds a
November 03, 2020 Nov 3

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