Samsung Exynos 2600 (2nm SF2) Process Analysis

Exynos 2600 SoC analysis details 2nm GAA transistor architecture, interconnects, and materials using advanced teardown and microscopy techniques.

Samsung's Exynos 2600 system-on-chip SoC die, extracted from the Samsung Galaxy S26+ 5G smartphone, has been analyzed using advanced teardown and microscopy techniques to characterize its transistor architecture, interconnect structure, materials used, and manufacturing process. The die is manufactured by Samsung using its 2nm SF2 gate-all-around (GAA) process. Samsung's GAA field-effect transistors (FETs) are formed using its proprietary Multi-Bridge-Channel FET (MBCFETTM) technology, which employs stacks of nanosheet channels. The Exynos 2600 is Samsung's second mobile processor featuring GAA-FETs after the Exynos 2500, following earlier deployments in a Samsung wearable processor and a bitcoin miner ASIC, and it is its first manufactured using a 2nm process.