Infineon IGLT65R055B2 CoolGaN G5 650 V Bi-Directional Switch Power Essentials

Infineon IGLT65R055B2: 650V BDS GaN with 55 mΩ design, enabling bidirectional to replace back‑to‑back GaN HEMTs.

The Infineon IGLT65R055B2 is a 650 V enhancement-mode bidirectional switch (BDS) GaN device with a typical RSS(ON) of 55 mΩ, based on Infineon’s CoolGaN™ 650 V G5 BDS technology. It is designed to replace conventional back-to-back GaN HEMT implementations, simplifying high-power-density designs. The device features four active terminals (dual gates and dual sources) plus a substrate terminal, enabling bidirectional voltage blocking and current conduction in a single device with added operating modes. A rugged gate injection transistor (GIT) structure ensures normally-off operation, robust gate reliability, and stable threshold voltage. An integrated substrate voltage control circuit dynamically connects the substrate to the lowest source potential, suppressing back-gate effects and enabling reliable bidirectional operation.