Product Item Code
Memory - NAND & DRAM
Memory - Process
Intel 144L QLC 1Tb 3D NAND Advanced Memory Essentials
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:
- Downstream product teardown
- Package photographs and X-rays, top metal and polysilicon die photographs
- SEM cross section along the word line (WL) and the bit line (BL) of the 3D NAND array
- TEM cross section along the BL direction (BLD)
- TEM cross section along the WL direction (BLD)
- SEM bevel
- Memory array
- Memory array edge
- Periphery at the polysilicon level
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