Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
Micron MT40A4G4JC-062:E 1z nm 16 Gb DDR4 Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and wordline driver regions of the Micron Technology Z32D die found inside a Micron Technology MT40A4G4JC-062E:E DDR4 SDRAM BGA package. This is the first commercialized 1z nm DRAM technology node from the industry, with the highest bit density (0.247 Gb/mm2, a 25% increase from Micron 1y nm 16 Gb DDR4 die) and the smallest cell size (0.0020 µm2, scaled down 17% from Micron 1y nm) to date.
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