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1y DDR4 DRAM from Samsung, SK hynix and Micron
Posted: June 7, 2019 Samsung LPDDR4X 17 nm 1Y Samsung DDR4 17 nm 1Y Micron MT40A2G4SA-062E 8Gb DDR4 The top 3 DRAM manufacturers (Samsung, SK hynix, and Micron) reached sub-20 nm in 2017 and 2018 with the introduction of 1x. A new milestone was
Qualcomm QTM052 mmWave Antenna Module
Posted: May 31, 2019 Qualcomm QTM052 mmWave Antenna Module Qualcomm claims to have “Made the impossible, possible” by incorporating mmWave technology into the mobile RF front end in a small, highly integrated module. There are many challenges
9X Layer 3D NAND Analysis
Posted: April 10, 2019 TechInsights’ Analysis of Solutions from Samsung, Toshiba, and Intel/Micron TechInsights’ analysis has begun on the much-anticipated 9XL 3D NAND solutions, including: Samsung 92L 3D V-NAND Toshiba 96L 3D BiCS Intel/Micron 96L
Intel 10 nm Logic Process Analysis (Cannon Lake)
Posted: June 12, 2018 Intel 10nm Logic Process Analysis TechInsights has found the long-awaited Cannon Lake - the Intel 10 nm logic process inside the i3-8121U CPU, used in the Lenovo IdeaPad330. This innovation boasts the following: Logic transistor
SK hynix 72L 3D NAND Analysis
Posted: May 31, 2018 SK hynix 72L 3D NAND Analysis SK hynix claims to have created the industry’s first-ever 72-layer 256Gb 3D NAND flash. This innovation has a block size 50% larger compared to 48-layer 3D TLC chips, it has a lower programming time
Micron 1x nm DDR Analysis
Posted: May 14, 2018 TechInsights has found the Micron 1x nm process in the Micron DIMM (DDR4) and Huawei Mate 10 (LPDDR4). This process brings about smaller die sizes and increased bit density over its predecessor, but it also presented a bit of a
Samsung S5K2X7SP 0.9 µm Image Sensor
Posted: March 8, 2018 Samsung S5K2X7SP Image Sensor We did not expect to see the Samsung S5K2X7SP image sensor until Q2, 2018…but here it is in the Vivo V7+. The application is a 24 MP selfie camera that uses Samsung’s Tetracell platform (2x2 pixels
Toshiba 64L NAND – BiCS FLASH
Posted: January 17, 2018 Toshiba 64L NAND – BiCS FLASH Toshiba released their 64L NAND solution (BiCS FLASH) in a SanDisk Ultra 3d SSD in 2017. TechInsights has conducted a significant amount of analysis on this product, including the following
Samsung 64L 3D V-NAND
Posted: January 17, 2018 Samsung 64L 3D V-NAND Samsung released their 64L 3D V-NAND solution in January of 2017 for key IT customers, and ramped up production in June for its expanded general market. The innovation included the following highlights
Samsung 18 nm DRAM Analysis
Posted: December 15, 2017 In April 2017, Samsung became the world’s first manufacturer to mass produce 10 nm-class DRAM. In June 2017, TechInsights published a blog based on our first learnings on this innovation that detailed a memory density
Intel/Micron 64L 3D NAND Analysis
Posted: November 9, 2017 Intel/Micron 64L 3D NAND Analysis The Intel 545S SSD, introduced in June 2017, was the first product to include the Intel/Micron 64L 3D NAND, and one of the first SSD to use 64L. The device boasts a more compacted die
TSMC 10 nm Process
Posted: July 26, 2017 TSMC 10 nm was found in the Apple A10X processor (APL1071) found in the Apple iPad Pro 10.5 (MQDT2CL/A). Taking a deeper look inside the TSMC 10 nm, our experts found quad-patterned FinFETs, which are first in the industry. Our
Intel 3D XPoint
Posted: May 16, 2017 3D XPoint technology was unveiled by Intel and Micron in August 2015, creating the first new memory category in more than 25 years. When Intel announced the Optane brand for storage products based on 3D XPoint technology, it
Sony IMX400 3-Layer Stacked (Exmor RS) CMOS Image Sensor
Posted: May 11, 2017 Sony Mobile announced the Xperia XZs at Mobile World Congress in February 2017. The Xperia XZs features a 1/2.3-inch optical format, 19 Mp resolution, Exmor RS “Motion Eye” camera offering with 960 fps video and predictive
Samsung 10 nm LPE Process
Posted: April 26, 2017 The Qualcomm Snapdragon 835 applications processor found in the Samsung Galaxy S8 is confirmed to be built on Samsung’s 10 nm LPE process. Debut devices for the 10 nm LPE are the Qualcomm Snapdragon 835 and the Samsung Exynos 9
Qualcomm WTR5975 Gigabit LTE Transceiver
Posted: April 20, 2017 Qualcomm WTR5975 Gigabit LTE Transceiver The WTR5975 is a member of the Snapdragon 835 family found in the Samsung Galaxy S8 and is the world’s first single-chip RF IC supporting Gigabit Class LTE, LTE-U, and LAA with 5 GHz
Apple W1 343S00131 Bluetooth Module
Posted: January 20, 2017 Apple W1 343S00131 Bluetooth Module The W1 chip found in the Beats Studio wireless headphone has the package mark 343S00131. Meanwhile, the W1 chip torn down from the Apple AirPods has the package mark 343S00130. They have a
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