The Advanced Memory Essentials (AME) deliverable for CBRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
Downstream product teardown
Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
SEM bevel through the logic memory array and peripheral regions
SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
A single TEM cross section through the CBRAM cell and orthogonal to bit lines, showing the CBRAM cell, metals and dielectrics, cell transistor gate stack, isolation, and other features
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.