Memory Technology Roadmaps: Three Segments, Three Inflection Points

Track the architectural and manufacturing advances with the Q3 2026 updates to the TechInsights DRAM, NAND, and Embedded & Emerging Memory Technology Roadmaps.

DRAM manufacturers are searching for new cell architectures as conventional scaling approaches its limits. 3D NAND suppliers are pushing layer counts higher while introducing hybrid bonding into future products. Embedded and emerging memories continue moving into more advanced CMOS platforms as new commercial products reach the market.

TechInsights has released Q3 2026 updates to its DRAM Technology Roadmap, NAND Technology Roadmap, and Embedded & Emerging Memory Technology Roadmap. Each roadmap focuses on a different part of the memory landscape, helping engineers, product managers, and technology strategists follow the developments that matter to their work.

Figure 1 – Q3 2026 DRAM, NAND, and Embedded & Emerging Memory technology roadmap updates track the architectural and manufacturing advances shaping the next generation of memory. (Source: TechInsights)

DRAM looks beyond conventional scaling

The next stage of DRAM scaling will require more than smaller process nodes. As the industry pushes beyond today's sub-10 nm-class generations, manufacturers are developing new cell architectures to overcome the limitations of conventional 6F² designs. The updated DRAM Technology Roadmap follows this transition from today's 0a, 0b, and 0c nodes toward future sub-5 nm generations. It tracks work on 3D DRAM, X-DRAM, IGZO DRAM, and VCT-based 4F² cells alongside enabling technologies such as extreme ultraviolet lithography (EUVL). The roadmap also follows computing DRAM, LPDDR, GDDR, and HBM development.

3D NAND continues its race upward

Higher layer counts remain the industry's primary path to greater storage density, but manufacturers are also preparing for broader adoption of hybrid bonding technologies. Samsung's 286-layer V9 V-NAND, Micron's 276-layer three-deck architecture, and KIOXIA's planned move directly to 332-layer BiCS10 all appear in the latest roadmap update. It also tracks multi-stacking cell arrays, hybrid bonding between NAND arrays and CMOS logic dice, advanced package technologies, and the competitive roadmaps of Samsung, SK hynix/Solidigm, Micron, KIOXIA/Western Digital, and YMTC.

Emerging memories move deeper into advanced CMOS

Embedded and emerging non-volatile memories continue expanding beyond research projects into commercial products. The updated roadmap tracks MRAM, PCRAM, ReRAM, FeRAM, and embedded Flash across leading foundries and memory developers. Recent additions include TSMC and NXP's 16nm FinFET automotive eMRAM, while the roadmap continues following products, process nodes, foundries, and CMOS platforms extending toward 8nm and 5nm.

Whether you're evaluating next-generation DRAM architectures, following the race beyond 300-layer NAND, or assessing emerging embedded memory technologies, staying current requires visibility into multiple technology roadmaps. The latest TechInsights roadmap updates let you track those transitions independently, giving you the latest view of where each memory technology is headed.