STM MasterGaN6 650 V Gen-2 MasterGaN Power IC Die Exploratory Analysis

STMicroelectronics MasterGaN6 integrates dual GaN dies and a gate driver in a half‑bridge, targeting high‑performance power conversion applications.

STMicroelectronics MasterGaN6 is a 650 V GaN power system-in-package that integrates two enhancement mode GaN dies in a half-bridge configuration together with a high-voltage gate driver die in a package. The device includes integrated low-dropout regulators, a bootstrap diode, fault and standby control pins, and protection features such as under-voltage lockout, thermal shutdown, and cross-conduction prevention. Applications include battery chargers and adapters, solar inverters, resonant converters, high-voltage DC-DC converters (buck, buck-boost), and high-voltage PFC converters, including totem-pole configurations.