Samsung K4L2E165YC 12 Gb 1z nm EUV LPDDR5 Transistor Characterization

Availability

Published

Product Code

TCR-2102-801

Release Date

08/04/2021

Product Item Code

SAM-K3LK4K40CM-BGCP

Device Manufacturer

Samsung

Device Type

LPDDR5

Subscription

Memory - NAND & DRAM

Channel

Memory - DRAM SWD and SA Transistor Characterization

Samsung K4L2E165YC 12 Gb 1z nm EUV LPDDR5 Transistor Characterization

This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and wordline drivers of the Samsung K4L2E165YC LPDDR5 SDRAM die found inside a Samsung K3LK4K40CM-BGCP package. The K4L2E165YC die uses Samsung’s new 1z nm DRAM technology node withBLP (SNLP) with EUVL applied and a bit density of 0.273 Gb/mm2.

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