This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and wordline drivers of the Samsung K4L2E165YC LPDDR5 SDRAM die found inside a Samsung K3LK4K40CM-BGCP package. The K4L2E165YC die uses Samsung’s new 1z nm DRAM technology node withBLP (SNLP) with EUVL applied and a bit density of 0.273 Gb/mm2.