Toward Vertical GaN Transistors – A Technical Perspective

Renewed momentum surrounds vertical GaN, as this content explores device design, epitaxial, and substrate choices shaping future power transistors.

Recent industry news has renewed optimism for vertical GaN device technology. This featured content will explore various aspects of vertical GaN power transistor design, including channel architectures, drain contact schemes, epitaxial growth techniques, and substrate material choices. The content will help material suppliers, equipment and product manufacturers, and device designers prepare for this exciting technology on the horizon.