Siproin HIK-4MLQ40G SMIC 40 nm 4 Mb Discrete STT-MRAM Memory Process Analysis

Advanced Memory Essentials report analyzing the Siproin PM004MNIATR die with key device metrics, TEM‑EDS/EELS results, and SMIC 40 nm LP STT‑MRAM integration insights.

This Advanced Memory Essentials (AME) report of the Shanghai Siproin PM004MNIATR die includes a concise analyst’s summary of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and/or TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features supported by unannotated image folders. The Siproin PM004MNIATR die is fabricated by SMIC using its 40 nm LP process with the STT-MRAM elements integrated between M4 and M5.