JHICC CA4S8G16V 25nm 8Gb DDR4 DRAM Array Process Analysis
1 Min Read Nov 25, 2025
Access a detailed look at JHICC’s first-generation 20 nm DRAM with our DPA of the 8 Gb CA4S8G16V die, including full analysis of its 25 nm stacked DRAM array.
This DPA report of the JHICC CA4S8G16V_die die includes detailed analysis of the DRAM array. The JHICC CA4S8G16V_die die is extracted from the JHICC CA4S8G16V package. The JHICC CA4S8G16V_die die is fabricated using 25 nm stacked DRAM CMOS process with a 8 Gb capacity. It is the first generation of JHICC's 20 nm DRAM technology family.
This summary outlines the analysis* found on the TechInsights' Platform.
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