HiSilicon T303283F1 FR1 RF Transceiver RFIC Process Analysis

RFIC process analysis on the HiSilicon T303283F1 die includes process type, transistor gate length, and minimum metal and gate pitches.

RFIC process analysis on the HiSilicon T303283F1 die found inside the HiSilicon T303283F1 component. The HiSilicon T303283F1 component was extracted from the Huawei Mate 80 (SGU-AL10) smartphone. The report focuses on the RF circuit fabrication process. It provides process node and foundry identification; process type and type of substrate used, minimum metal and gate pitches, transistor gate length, effective gate width gate layers and thicknesses, contacts and metal layers, and dimensions affecting the device parasitics.

The findings in this report are inferred from multiple SEM and TEM cross-sections of the die through its LNA circuit blocks, and EDS analysis of samples.