Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
Samsung K4L2E165YC 12 Gb 1z nm EUV LPDDR5 Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and wordline drivers of the Samsung K4L2E165YC LPDDR5 SDRAM die found inside a Samsung K3LK4K40CM-BGCP package. The K4L2E165YC die uses Samsung’s new 1z nm DRAM technology node withBLP (SNLP) with EUVL applied and a bit density of 0.273 Gb/mm2.
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