Product Code
PEF-2010-801
Availability
Published
Product Item Code
STM-MASTERGAN1
Device Manufacturer
STMicroelectronics
Device Type
GaN Power IC
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
STMicroelectronics MASTERGAN1 600 V Half-Bridge Driver with Two e-Mode GaN HEMT Power Essentials Summary
This report presents a power floorplan analysis of the STMicroelectronics MASTERGAN1 device. The MASTERGAN1 features a 600 V, 150 mΩon-resistance half-bridge circuit with gallium nitride high electron mobility transistors with a 650 V drain-source breakdown voltage (V(BR)DS), and a silicon-based bipolar-CMOS-DMOS gate driver [1]. The focus of this report is on the GaN HEMT dies.
The authoritative information platform to the semiconductor industry.
Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.
1891 Robertson Rd #500, Nepean, ON K2H 5B7
Copyright © 2024 TechInsights Inc. All rights reserved.